From model to low noise amplifier monolithic microwave integrated circuit: 0.03–2.6 GHz plastic quad‐flat no‐leads packaged Gallium‐Nitride low noise amplifier monolithic microwave integrated circuit
نویسندگان
چکیده
Abstract This paper describes an air cavity quad‐flat no‐leads (QFN) over‐molded plastic packaged cascode broadband GaN LNA Monolithic Microwave Integrated Circuit (MMIC) with resistive feedback fabricated 0.25 μm HEMT technology. The single stage QFN MMIC achieves a bandwidth of 0.03–2.6 GHz typical gain 11.5 dB and less than 1.5 noise figure. low amplifier (LNA) design is based on model concept transistor, the transistor used in design, that has not been previously. for first time along MMIC. housed 12‐lead 3 × mm 2 package mounted application board. measurements taken board represent good convergence model. measurement results 50 Ω internal matching both ports without need additional components make this attractive many applications.
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ژورنال
عنوان ژورنال: International Journal of Numerical Modelling-electronic Networks Devices and Fields
سال: 2021
ISSN: ['0894-3370', '1099-1204']
DOI: https://doi.org/10.1002/jnm.2859